Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations
نویسندگان
چکیده
A stochastic model of the resistive switching mechanism in bipolar oxide-based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation probability near the anode and the cathode demonstrate a high robustness of the low occupation region. The RESET process in RRAM simulated with our stochastic model is in good agreement with experimental results.
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Stochastic modeling of bipolar resistive switching in metal-oxide based memory by Monte Carlo technique
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